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Monthly Archive for August, 2009

Why did my FET fail?

August 25, 2009

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By Dr. F.A.E.

We’re introducing a new blogger to the site: Dr. Fred A. Engleberry. Dr. F.A.E. holds a PhD from MIT (Muckton Institute of Talknology) and has several months of valuable experience with applied technology. We are pleased to have Dr. F.A.E. available to answer questions collected from customers around the world.

Dr. F.A.E, “Smoky” from General Specifics Inc. sent a question…”Why did my FET fail?” Without further ado, we’ll turn the session over to Dr. Fred.

First of all, Smoky, you’re probably expecting a lot of annoying questions about your design. Such as, what frequency you’re running at, what the gate drive circuit looks like, what the load is and what supply voltage is present. Some design engineers might try to determine whether there is an avalanche condition beyond what the device might be reasonably expected to tolerate, whether the gate drive is insufficient or oscillating, whether the load is inductive, whether voltage spikes creep too close to breakdown voltages on the gate or drain, or whether the total package dissipation is being exceeded.

However, let’s say in this instance I could see your schematic and Bill of Materials (BOM). Your gate resistor, R42, as noted on the schematic, should be one ohm, but the BOM shows 1,000 ohms. Replace this resistor with the proper value and you will find that your FET turn-on and turn-off rise and fall times will become reasonable and you will avoid gate oscillation – and your FET design will become robust.

Want more information on FETs? Check out our website for MOSFETs at http://fairchildsemi.com/products/mosfets/index.html


About the author:
Dr. Fred A. Engleberry (also know as Dr. F.A.E.) holds a PhD from MIT (Muckton Institute of Talknology). Fred has a world-class intellect and rarely neglects an opportunity to mention it. Argumentative and contentious, he's often irritatingly correct when answering questions and discussing semiconductor technology, real world design trade-offs and engineering issues. Dr. F.A.E's core competencies include using big words when small ones would suffice and providing long-winded, indirect answers to simple questions.

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Perfect Sunrise, Great location, Wonderful people.

August 3, 2009

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By Katelyn Chapman

Arriving at Fort Williams in Cape Elizabeth, Maine on Saturday for the 12th Fort Williams in Cape Elizabeth, MaineTD Banknorth Beach to Beacon 10K, my breath was taken away. This didn’t happen from physical exertion but from the majestic beauty of the sunrise over the beautiful rocky coast. I had a feeling that this meant it would be a memorable day.

When the race started, we knew that people from all over the world and over 50 of our own employees were running the picturesque course. Anticipation rose as we awaited the arrival of the first finishers.

At first the runners trickled in but soon the field was flooded with participants of all ages. We congratulated everyone on their successful completion and were excited to spot the green shirts of our co-workers. The Fairchild Semiconductor men ended up finishing #2 in the men’s corporate challenge! Congrats guys!

In our Green Energy Sponsor tent, dscn38351we had fun mingling with interested community members who took home free give-aways like green water bottles. Visitors of all ages rode the bicycle to charge their cell phone.

When I left at the end of the event, I thought how amazing the day was- perfect sunrise, great location, wonderful people!

A big thanks to my fellow employees at Fairchild Semiconductor who ran and helped manBeach to Beacon 2009 Fairchild team our Green Energy Sponsor booth. Our contributions will go to the 2009 beneficiary, Maine Handicapped Skiing. Thanks to everyone at Fairchild who made our Green Energy Sponsorship a success!


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