Tag Archive for ‘MOSFET’
May 5, 2011
-
By Paul Hughes
At PCIM Europe 2011, 17-19 May, experts from Fairchild Semiconductor, (NYSE: FCS), a leading global supplier of high performance power and mobile products, will discuss industry-leading technologies for power supplies and motion control applications at poster and dialog sessions held during the show.
Poster/Dialog Sessions from Fairchild experts at PCIM Europe include:
New Medium Voltage Power MOSFETs for Synchronous Rectification - Wonsuk Choi, Dongwook Kim and Sung-Mo Young will discuss how the latest shielded-gate technology can dramatically reduce both on-resistance and gate charge. (PP11, Tuesday, 17 May, 16:00-17:15)
New Generation of Smart Power Module for Home Appliances Motor Drive Applications - Taesung Kwon, Steve Han, Elvis Ma, and Sung-Il Yong will introduce new Motion-SPMTM devices in µ-Mini-DIP packaging which are fully optimized intelligent integrated IGBT inverter modules for home appliance motor drive applications. (PP20, Tuesday, 17 May, 16:00-17:15)
A Power-on Reset Circuit for HVIC Targeting Resiliency Against High Voltage Peak Noise - Paul Jung-Ho Lee, Jong-Mu Lee and Won-Hi Oh will describe a power-on reset circuit that is seamlessly interwoven with an extant UVLO (Under Voltage Lock Out) circuit, thereby adding a minimal number of circuit elements. (PP37, Tuesday, 17 May, 16:00-17:15)
Effect of Inductive Parasitics on the Device Loss and System Efficiency in a DC-DC Synchronous Buck Converter for Computing Applications - Tirthajyoti Sarkar, Ritu Sodhi, Scott Perason and Steven Sapp, along with Aditya Upadhaya from the Indian Institute of Technology, IND, will discuss how the synchronous buck converter has evolved as the most widely used circuit topology for high-power-density, low-output voltage, high-current switching power conversion for computing applications. (PP107, Wednesday, 18 May, 16:00-17:15)
DC-DC Converter Evaluation with Automated Efficiency Plot Generation - Scott Pearson, Stan Benczkowski, Steven Sapp, Tirthajyoti Sarkar, and Ritu Sodhi will discuss how Spice circuit simulation is a valuable tool when evaluating power MOSFET performance in DC-DC converter applications. (PP109, Wednesday, 18 May, 16:00-17:15)
Fairchild is committed to helping designers meet the engineering challenges through technology and process advancements that result in increased performance and functional integration as well as design support resources that minimize components while reducing engineering time.
PCIM Europe, held in Nuremberg, 17-19 May, is Europe’s premiere venue for experts in power electronics and its applications in Intelligent Motion and Power Quality.
Join us at PCIM Europe, in Hall 12, booth 601, to see our extensive portfolio of power solutions!
Fairchild Semiconductor: The Right Technology for Your SuccessTM.
Can’t make it to the show? Follow us on Twitter to catch the latest from the show floor
Tags: Add new tag, DC-DC converter, Fairchild, Fairchild Semiconductor, home appliance motor drive applications, mobile, MOSFET, Motion-SPM, PCIM, PCIM Europe, power, power-on reset circuit, reduce gate charge, reduce on resistance, synchronous buck converter
March 3, 2011
-
By Paul Hughes
Next week at APEC 2011, we’ll be discussing some of our breakthrough technology. Those curious about our DC-DC Converter solutions are invited to see our new Low Voltage MOSFETs and learn more about our Dual Cool™ packaging technology.
Our Dual Cool package features an exposed heat slug that delivers a significant reduction in thermal resistance from junction to top of case, resulting in more than 60 percent higher power dissipation capability than standard PQFN packaging when a heat sink is mounted. Additionally, MOSFETs in the Dual Cool package are designed with the proprietary Fairchild Semiconductor PowerTrench® process technology that enables lower RDS(ON) and higher load currents in smaller package sizes.
Fairchild is dedicated to providing diverse power products that are smaller than ever, and increasingly more energy efficient, in order to meet designer needs and ultimately, consumer demands. Fairchild has a vast array of products and families available including the Fairchild Power Switch (FPSTM) series, High Voltage Gate Driver IC products (HVIC), and DC-DC conversion solutions such as Dual Cool MOSFETs, PowerTrench® MOSFETs, and TinyBuck™ regulators. With these products and more, Fairchild is committed to making technology that fits the needs of engineers.
To learn more about Dual Cool packaging technology and other power supply technology, come to booth 209 at APEC 2011!
Fairchild Semiconductor: The Right Technology for Your Success™.
Can’t make it to the show? Follow us on Twitter to catch the latest from the show floor.
Tags: APEC, Dual Cool, Fairchild, Fairchild Semiconductor, MOSFET, packaging
February 24, 2011
-
By Paul Hughes
Discussion at IIC China in Shenzhen today included information on Fairchild Industrial solutions.
In booth 2J19, Fairchild discussed a number of MOSFET and IGBT products that demonstrate the company’s leadership in the High Voltage Switching discrete component marketplace. Among the solutions to be we’ll be talking about at the show will include:
The 500V N-Channel MOSFET, FRFET® MOSFET, and Ultra FRFET™ MOSFETs. These N-Channel enhancement mode power field effect transistors are produced using the company’s proprietary, planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
The industry-leading SupreMOS® MOSFETs. The next generation of high voltage super-junction MOSFETs, SupreMOS MOSFETs employ a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS devices provide world-class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
The FGA20S120M, part of a group of 1200V Shorted-Anode Trench IGBTs. Using advanced Field Stop Trench and shorted-anode technology, these products designed for induction of heating microwave ovens offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability.
Fairchild is committed to making technology that fits the needs of engineers. We invite you to visit our booth, 2J19, during the remainder of IIC China in Shenzhen to learn more about the company’s Industrial products and how they can contribute to your success.
Fairchild Semiconductor, the Right Technology for Your Success™.
Tags: Fairchild, Fairchild Semiconductor, FGA20S120M, FRFET Ultra FRFET, IIC, MOSFET, SupreMOS
February 24, 2011
-
By Paul Hughes
Today at IIC China in Shenzhen, visitors to the Fairchild booth learned more about Fairchild Motor Drive solutions, including demos on DC-Motor with SPM and BLDC with SPM.
Fairchild has a broad range of power components and support for motor control design in consumer and industrial applications including Fairchild Motion-SPM™ smart power modules and IGBTs.
One of the products Fairchild highlighted today at IIC was the FAN7382, a monolithic half-bridge gate driver IC. The device can drive MOSFETs and IGBTs that operate up to +600V. Fairchild high-voltage process and common-mode noise canceling technique provides stable operation of the high-side driver under high dv/dt noise circumstances. The FAN7382 is an advanced level shift circuit that allows for high-side gate driver operation up to VS = -9.8 V (typ.) for VBS = 15V. The input logic level is compatible with standard TTL-series logic gates. UVLO circuits for both channels prevent malfunction when VCC and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for fluorescent lamp ballasts, PDP scan drivers, motor controls, etc.
Fairchild also talked about products such as the FCM8201/FCM8202. The FCM8201 and FCM8202 are three-phase sinusoidal brushless DC (BLDC) motor controllers. They come with Fairchild advanced Hall sensor design. Using the Hall sensor signals, the control system on these products are able to execute the PWM commutation by switching the three-phase inverter. There are two PWM modes for selection: Sine-Wave Mode and the Square-Wave Mode. Square-Wave Mode includes PWM-PWM and PWM-ON approaches to improve the efficiency of the motor drive. Protection functions including over-voltage, over-current, over temperature, and short circuit prevent the control circuits and the motor from being damaged, particularly under stressed applications and demanding environments. Both the FCM8201 and the FCM8202 can be operated stand-alone or worked with microcontrollers for advanced BLDC motor control.
Fairchild is committed to making technology that fits the needs of engineers. We invite you to visit our booth, 2J19, at this year’s IIC China in Shenzhen to learn more about our Motor products and how they can contribute to your success.
Fairchild Semiconductor: The Right Technology for Your Success™
Tags: Fairchild, Fairchild Semiconductor, FAN7382, FCM8201, FCM8202, gate driver IC, IGBT, IIC, MOSFET, motor controllers
February 18, 2011
-
By Paul Hughes
At IIC China 2011, Fairchild will demonstrate its Low Power Solutions at booth 2J19.
One area we’ll be highlighting is the FSEZ1317. When using this solution, a low-cost, smaller, and lighter charger results, as compared to a conventional SSR (secondary side regulated) design or a linear transformer. To minimize standby power consumption, the proprietary green mode provides off-time modulation to decrease PWM frequency under light-load conditions.
Key features available include 30mW standby power, HV start up and an integrated power MOSFET for ease of design, primary side regulation without secondary side feedback and a universal AC input range. Unlike competitive solutions, PSR PWM controllers from Fairchild achieve constant voltage (CV) (±5%), constant current (CC) (±7%), 30mW standby power and ENERGY STAR Level V efficiency, all with a competitive bill of materials (BOM) cost and component count.
Fairchild is dedicated to providing diverse power products that are smaller than ever, and increasingly more energy efficient, in order to meet designer needs and ultimately, consumer demands. Fairchild has a vast array of products and families available including the Fairchild Power Switch (FPSTM) series, High Voltage Gate Driver IC products (HVIC), and DC-DC conversion solutions such as Dual Cool™ packaged MOSFETs, PowerTrench® MOSFETs, and TinyBuck™ regulators. With these products and more, Fairchild is committed to making technology that fits the needs of engineers.
To learn more about products like these, come to booth 2J19 at IIC China in Shenzhen!
Fairchild Semiconductor: The Right Technology for Your Success™.
Can’t make it to the show? Follow us on Twitter to catch the latest from the show floor.
Tags: Fairchild, Fairchild Semiconductor, FSEZ1317, IIC, IIC China, Low Power, MOSFET
November 6, 2010
-
By Paul Hughes
Engineers interested in power solutions can drop by Fairchild’s booth (Hall A4, Booth #506) at electronica 2010 and check out our Engineering table. We’ll be discussing solutions for 55W power supply, 360W asymmetric HB power supply with synchronous rectification, and 200W LLC power supply.
Those looking to explore Fairchild products for 360W asymmetric HB power supply with synchronous rectification can expect to see our FSFA2100 Half Bridge PWM Converter. This series of green power switches integrates a PWM controller and MOSFETs specifically designed for asymmetric-controlled topologies with minimal external components. Compared with discrete-PWM-controller-and-MOSFET solutions, the FSFA series of switches can reduce total cost, Bill of Materials (BOM) list, size and weight while increasing efficiency, productivity and system reliability.
Also at our engineering table, attendees can find information about solutions supporting 200W LLC power supplies, including Fairchild products such as the FAN7930. This product is an active PFC controller for boost PFC applications that operate in critical conduction mode. This device is ideal for LCD and PDP TV applications, as well as for applications using less than 200W where PFC is mandated, including Class C lighting equipment greater than 25W, and Class D PC, TV and monitors greater than 75W.
To learn more about products like these and other Fairchild technology, come to Hall A4, Booth #506 at electronica 2010! Fairchild Semiconductor: The Right Technology for Your Success™.
Can’t make it to the show? Follow us on Twitter to catch the latest from the show floor.
Tags: electronica, Fairchild, Fairchild Semiconductor, FAN7930, MOSFET, power
June 18, 2010
-
By Fairchild Semiconductor
Written by Steven Sapp, Ritu Sodhi and Sampat Shekhawat
In a typical data center, less than half of the power consumption goes into the computing function. Consequently, data-center operators are looking at every opportunity to improve power conversion and distribution efficiency, including eliminating the number of conversion stages through the distribution of high voltage direct-current sources.
This article, featured in the April 16, 2010 issue of Green SupplyLine, provides an update on the great strides that have been made during the last decade in the development of power semiconductor devices and products to help reduce wasted energy through improved efficiency at every stage of the power delivery system.
Read the complete article.
Tags: data center, MOSFET, power semiconductor
January 26, 2010
-
By Dr. Efficiency
Dear Dr. Efficiency, I used a synchronous rectifier MOSFET with large current and low RDSON in a forward converter structure for synchronous rectification (SR) and expected there would be a significant improvement in efficiency. However nothing happened. Why was that? I thought that the SR MOSFET should make a significant contribution to efficiency improvement. - XM Wang
Hello XM,
You are on the right track, but may need to make some corrections. To deal with the power loss, we have to consider two aspects.
The power loss of semiconductor switches mainly comes from two sources: the conduction loss resulting from the loss on the RDSON that is generated when ID goes through the body diode during dead time, and the switching loss which can be roughly classified as three components: the loss caused from current-voltage cross when the MOSFET switches between turn-on and cut-off, the loss on the parasitic capacitance during switching, and that caused by the trr time of the body diode in the MOSFET.
The above equations show the close relation between the switching loss and the switching frequency. In particular, the loss during dead time mainly depends on the switching frequency, since the dead time is usually fixed. In general, for a given output power, the higher the frequency the more switching loss portion dominance; the lower the frequency the more conduction loss portion dominance.
In a SR structure, the body diode is already turned on by freewheel current before the MOSFET turns on. Since the voltage drop on the body diode is usually less than 2V, the conduction loss is not significant in equation (1).
Equation (2) shows the effect on the switching caused by the parasitic capacitance (Coss) of the MOSFET. This Coss is the equivalent capacitance between drain and source, with a voltage equal to Vds applied. Thus, this portion of loss is proportional to the switching frequency and Vds. You can check if the loss in your design is mainly caused by Coss by paralleling a smaller capacitance between the drain and the source to make the two MOSFETs have almost the same Coss value, then analyze the results by using the equations given above. You’ll get an idea about why the efficiency improvement is not significant.
Finally, in a forward half-bridge structure, the switching loss contributed by trr is also significant since the secondary current is usually kept in continuous current mode. You can check if the loss in your design is caused by trr by paralleling a schottky diode on the SR MOSFET side and then observing whether the efficiency is improved notably. If the efficiency is improved significantly, you can select a MOSFET with shorter trr time for the SR MOSFET.
Now, go back to your question. For MOSFETs within the same series, the lower the RDSON, the larger the value of parasitic capacitance. For example, FDP047N10 from Fairchild Semiconductor has a RDSON of 4.7mohm and a Coss of 1500pF, whereas FDP100N10 has a RDSON of 10mohm, but its Coss is only 710pF. In other words, it is possible that the lower RDSON FDP047N10 may have a larger loss under high switching frequency due to its larger Coss. Other parameters, such as Qg, parasitic body diode in MOSFET, also contribute to the overall power loss, which compromises the efficiency improvement effect of lower Rds. So, apart from the RDSON, which should be as low are also possible, the parasitic characteristic is an important factor in MOSFET selection.
Hope you are satisfied with my explanation. Let’s go and have a cup of coffee.
About the author:
Dr. Efficiency is a member of IEEE and the 85+ standards team as well as other prestigious electronic societies. He is the company’s expert in power efficiency, and when he’s not in the lab inventing he enjoys karaoke and table tennis and spending time with family and friends. He’s also passionate about blogging on all things related to energy efficiency.
Education: PhD in Electrical Engineering from Asia School of Engineering Tags: conduction loss, efficiency, MOSFET, power loss, semiconductor switches, switching loss, synchronous rectifier
RSS